| PART |
Description |
Maker |
| BBY56-02W BBY5602W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
From old datasheet system
|
SIEMENS AG
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-B916 BBY58-02W BBY5802W |
From old datasheet system
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
|
Siemens Group
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BB512 Q62702-B479 |
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8 V)
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ?8 V)
From old datasheet system
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ˇ 8 V) 470 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BB837 BB857 |
Varactordiodes - Silicon tuning diode for SAT tuning units
|
INFINEON[Infineon Technologies AG]
|
| KDV1430 KDV1430A KDV1430B KDV1430C KDV1430D |
Silicon diode for FM radio band tuning applications
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
|
Korea Electronics (KEC)
KEC(Korea Electronics)
|
| MMVL109T1 MMVL109T1G |
Tuning Diode SOD323 30V VHF BAND, 29 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
Silicon Epicap Diodes
|
ONSEMI[ON Semiconductor]
|
| MMVL409T1G |
Silicon Tuning Diode VHF BAND, 29 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE
|
ON Semiconductor
|
| BBY53-02W BBY53-03W BBY5307 BBY53-02L BBY53-02V |
5.3 pF, 6 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
Silicon Tuning Diode
|
Infineon Technologies AG
Infineon Technologies A...
|
| KDV310E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning
|
KEC(Korea Electronics)
|
| KDV214 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV TUNING)
|
KEC[KEC(Korea Electronics)]
|
| KDV287E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(UHF SHF TUNING)
|
KEC(Korea Electronics)
|
